july 2005 1/5 5 HD1530JL high voltage npn power transistor for high definition and new super-slim crt display features state-of-the-art technology: diffused collector ?enhanced generation? ehvs1 wider range of optimum drive conditions less sensitive to operating temperature variation applications horizontal deflection output for digital tv, hdtv, and high -end monitors description the device uses a diffused collector in planar technology which adopts ?enhanced high voltage structure? (ehvs1) that was developed to fit high-definition crt displays. the new hd product series features improved silicon efficiency, bringing updated performance to horizontal deflection output stages. table 1. order codes figure 1. package figure 2. internal schematic diagram to-264 1 2 3 www.st.com preliminary data part number marking package packing HD1530JL HD1530JL to-264 tube rev.1
HD1530JL 2/5 table 2. absolute maximum rating table 3. thermal data table 4. electrical characteristics (t case = 25c; unless otherwise specified) note: 1 pulsed duration = 300 s, duty cycle 1.5%. symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 700 v v ebo emitte-base voltage (i c = 0) 10 v i c collector current 26 a i cm collector peak current (t p < 5ms) 40 a i b base current 10 a i bm base peak current (t p < 5ms) 20 a p tot total dissipation at t c = 25c 200 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thjc thermal resistance junction-case ____________________ max 0.625 c/w symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1500v v ce = 1500v ____ t c = 125c 0.2 2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 5v 10 a v ceo( sus ) note: 1 collector-emitter susting voltage (i b = 0) i c = 10ma 700 v v ebo emitter-base voltage (i c = 0) i e = 10ma 10 v v ce(sat) note: 1 collector-emitter saturation voltage i c = 13a _____ i b = 3.25a 2.5 v v be(sat) note: 1 base-emitter saturation voltage i c = 13a _____ i b = 3.25a 1 1.5 v h fe dc current gain i c = 1a _____ v ce = 5v i c = 13a ____ v ce = 5v 5 28 8 t s t f inductive load storage time fall time i c = 12a ____ _ f h = 32khz i b(on) = 1.5a ___ i b(off) = -6.1a 3.3 240 s ns t s t f inductive load storage time fall time i c = 12a _____ f h = 48khz i b(on) = 2a ____ i b(off) = -6.7a 2.8 200 s ns t s t f inductive load storage time fall time i c = 6.5a _____ f h = 100khz i b(on) = 0.9a ___ i b(off) = -4.6a 1.5 110 s ns
HD1530JL 3/5 table 5. to-264 mechanical data figure 3. to-264 drawing
HD1530JL 4/5 table 6. revision history date revision changes 05-july-2005 1 initial release.
HD1530JL 5/5 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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